Hetero double gate-dielectric Tunnel FET with record high ION /IOFF ratio

To manage the increasing static leakage in low power applications and reduced Ion/Ioff due to aggressive scaling of MOS transistors, Tunnel FET (TFET) devices are considered as the most promising candidates because of their excellent immunity against such important short channel effects. Solutions for leakage reduction as well as improving on current of the device are sought at the device design and process technology levels. In this paper, we propose a novel design for a hetero double gate dielectric tunnel field effect transistor (HDG-TFET). Simulation of this device characteristics show significant improvement over conventional double gate devices with high K only gate dielectric TFET. In this device, a low K gate oxide is used at the drain end and a high K gate oxide is used at the source end with low band gap material in source region. Ambipolar behavior at the drain end can be suppressed and a record high Ion/Ioff of the order of 10 13 is achieved. General Terms Device simulation .